tn5335 doc.# dsfp-tn5335 b081213 drain source gate features ? low threshold ? high input impedance ? low input capacitance ? fast switching speeds ? low on-resistance ? free from secondary breakdown ? low input and output leakage ? complementary n- and p-channel devices applications ? logic level interfaces - ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? telecom switches general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. pin confguration to-243aa (sot-89) product marking to-243aa (sot-89) tn3sw w = code for week sealed = ?green? packaging to-236ab (sot-23) to-236ab (sot-23) n3sw w = code for week sealed = ?green? packagin g package may or may not include the following marks: si or package may or may not include the following marks: si or gate source drain drain ordering information part number package option packing tn5335k1-g to-236ab (sot-23) 3000/reel TN5335N8-G to-243aa (sot-89) 2000/reel product summary bv dss /bv dgs r ds(on) (max) i d(on) (min) v gs(th) (max) 350v 15 750ma 2.0v typical thermal resistance package ja to-236ab (sot-23) 203 o c/w to-243aa (sot-89) 173 o c/w -g denotes a lead (pb)-free / rohs compliant package. contact factory for wafer / die availablity. devices in wafer / die form are lead (pb)-free / rohs compliant. supertex inc. supertex inc. www .supertex.com
2 tn5335 doc.# dsfp-tn5335 b081213 electrical characteristics (t a = 25 o c unless otherwise specifed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 350 - - v v gs = 0v, i d = 100a v gs(th) gate threshold voltage 0.6 - 2.0 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - - -4.5 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 1.0 a v gs = 0v, v ds = 100v - - 10 v gs = 0v, v ds = max rating - - 1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current 300 - - ma v gs = 4.5v, v ds = 25v 750 - - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - - 15 v gs = 3.0v, i d = 20ma - - 15 v gs = 4.5v, i d = 150ma - - 15 v gs = 10v, i d = 200ma r ds(on) change in r ds(on) with temperature - - 1.0 %/ o c v gs = 4.5v, i d = 150ma g fs forward transductance 125 - - mmho v ds = 25v, i d = 200ma c iss input capacitance - - 110 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - - 60 c rss reverse transfer capacitance - - 22 t d(on) turn-on delay time - - 20 ns v dd = 25v, i d = 150ma, r gen = 25 t r rise time - - 15 t d(off) turn-off delay time - - 25 t f fall time - - 25 v sd diode forward voltage drop - - 1.8 v v gs = 0v, i sd = 200ma t rr reverse recovery time - 800 - ns v gs = 0v, i sd = 200ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. notes: ? i d (continuous) is limited by max rated t j . ? mounted on fr5 board, 25mm x 25mm x 1.57mm. thermal characteristics package i d (continuous) ? i d (pulsed) power dissipation @t a = 25 o c i dr ? i drm to-236ab (sot-23) 110ma 0.8a 0.36w 110ma 0.8a to-243aa (sot-89) 230ma 1.3a 1.6w ? 230ma 1.3a supertex inc. www .supertex.com
3 tn5335 doc.# dsfp-tn5335 b081213 switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator vdd r l output d.u.t. t (on) t d(on) t (off) t d(off) t r input input output 10v vdd r gen 0v 0v t f supertex inc. www .supertex.com
4 tn5335 doc.# dsfp-tn5335 b081213 3-lead to-236ab (sot-23) package outline (k1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch symbol a a1 a2 b d e e1 e e1 l l1 dimension (mm) min 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.95 bsc 1.90 bsc 0.20 ? 0.54 ref 0 o nom - - 0.95 - 2.90 - 1.30 0.50 - max 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 o jedec registration to-236, variation ab, issue h, jan. 1999. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to236abk1, version c041309. vi ew b vi ew a - a side v iew t op vi ew v iew b gauge plane seating plane 0.25 l1 l e1 e d 3 1 2 e e1 b a a seating plane a a2 a1 supertex inc. www .supertex.com
5 tn5335 (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-tn5335 b081213 3-lead to-243aa (sot-89) package outline (n8) symbol a b b1 c d d1 e e1 e e1 h l dimensions (mm) min 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 ? 1.50 bsc 3.00 bsc 3.94 0.73 ? nom - - - - - - - - - - max 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20 jedec registration to-243, variation aa, issue c, july 1986. ? this dimension differs from the jedec drawing drawings not to scale . supertex doc. #: dspd-3to243aan8, version f111010. b b1 d d1 e h e1 c a 1 2 3 e e1 t op vi ew side v iew l supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?2013 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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